Submit Manuscript

Pakistan Journal of Biological Sciences

Year: 2001 | Volume: 4 | Issue: 11 | Page No.: 1341-1344
Facebook Twitter Digg Reddit Linkedin StumbleUpon E-mail

Article Trend

Total views 160

Search

Authors

Jiban Krishna Biswas

Ho Ando

Ken-ichi Kakuda

Muhammad Ali Siddiquee

Shaikh Tanveer Hossain

Sunil Kumar Biswas

Keywords

An understanding of the comparative effects of aliphatic and aromatic acid toxicity on the growth of seedling attributes of an anoxia tolerant rice genotype is essential to develop an appropriate direct seeded lowland rice. Haenuki, an anoxia tolerant rice genotype was used to compare the toxicity level of aliphatic and aromatic acids. Acetic, propionic, and butyric acid from aliphatic group and ferulic, p-coumaric, and p-hydroxybenzoic acid from aromatic group were used for the study. Sprouted seeds sown in sealed test tubes containing different acid solutions were allowed to grow for 7 days at 30 oC and pH 5-7 in the dark. The variation in organic acid concentrations for 50% growth inhibition (C50) of seedling attributes was evident from the study. First leaf survival (%) was more tolerant as compared to 1st leaf length, plant height and root length for certain instances. C50 values indicate that ferulic acid and p-coumaric acids were more toxic than acetic, propionic, butyric and p-benzoic acids. Among the aliphatic acids, propionic acid was the most toxic, followed by butyric and acetic acid, whereas from the aromatic group, p-coumaric and ferulic acid showed the highest level of toxicity.
PDF References Citation

How to cite this article

Jiban Krishna Biswas, Ho Ando, Ken-ichi Kakuda, Muhammad Ali Siddiquee, Shaikh Tanveer Hossain and Sunil Kumar Biswas, 2001. Comparative Toxicity of Aliphatic and Aromatic Acids on Seedling Attributes of Anoxia-tolerant Rice (Oryza sativa L.) Genotypes Grown in Hypoxia. Pakistan Journal of Biological Sciences, 4: 1341-1344.

DOI: 10.3923/pjbs.2001.1341.1344

URL: https://scialert.net/abstract/?doi=pjbs.2001.1341.1344

Leave a Comment

Your email address will not be published. Required fields are marked *