M.S.Z. Abidin
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
M.E. Sharifabad
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
S.F.A. Rahman
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
F. Mustafa
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
A.M. Hashim
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
A.R.A. Rahman
Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
R. Qindeel
Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia
N.A. Omar
Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya, Selangor, Malaysia
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How to cite this article
M.S.Z. Abidin, M.E. Sharifabad, S.F.A. Rahman, F. Mustafa, A.M. Hashim, A.R.A. Rahman, R. Qindeel and N.A. Omar, 2010. Open-Gate Liquid-Phase Sensor Fabricated on Undoped-AlGaN/GaN HEMT Structure. Journal of Applied Sciences, 10: 2078-2085.
DOI: 10.3923/jas.2010.2078.2085
URL: https://scialert.net/abstract/?doi=jas.2010.2078.2085
DOI: 10.3923/jas.2010.2078.2085
URL: https://scialert.net/abstract/?doi=jas.2010.2078.2085