Citation to this article as recorded by
Analysis of Threshold Voltage Variance in 45nm N-Channel
Device Using L<sub>27</sub> Orthogonal Array
Method Advanced Materials Research |
How to cite this article
F. Salehuddin, I. Ahmad, F. A. Hamid and A. Zaharim, 2011. Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method. Journal of Applied Sciences, 11: 1261-1266.
DOI: 10.3923/jas.2011.1261.1266
URL: https://scialert.net/abstract/?doi=jas.2011.1261.1266
DOI: 10.3923/jas.2011.1261.1266
URL: https://scialert.net/abstract/?doi=jas.2011.1261.1266