Subscribe Now Subscribe Today
Research Article
 

Calculation of the Effective g-factor in Two Dimensional Systems



Saglam M. and Boyacioglu B.
 
ABSTRACT

The effective Lande-g factor of two dimensional systems is calculated on the basis of the effective parameters approximation. By a simple diagram method, it is shown that the effective g-factor only takes even integer values. The calculations are carried out both in the absence and presence of the Landau level broadening.

Services
Related Articles in ASCI
Similar Articles in this Journal
Search in Google Scholar
View Citation
Report Citation

 
  How to cite this article:

Saglam M. and Boyacioglu B. , 2002. Calculation of the Effective g-factor in Two Dimensional Systems. Journal of Applied Sciences, 2: 80-83.

DOI: 10.3923/jas.2002.80.83

URL: https://scialert.net/abstract/?doi=jas.2002.80.83

REFERENCES
Ando, T. and Y. Uemura, 1974. Theory of oscillatory g-factor in MOS inversion layer under strong magnetic field. J. Phys. Soc. Jap., 37: 1044-1052.
Direct Link  |  

Ando, T., A.B. Fowler and F. Stern, 1982. Electronic properties of 2D. Rev. Mod. Phys., 54: 437-457.

Duncan, W. and E.E. Schneider, 1963. Electron spin resonance in n-type GaAs. Phys. Lett., 7: 23-24.
Direct Link  |  

Englert, T., K. von Klitzing, R.J. Nicholas, G. Landwehr, G. Dorda and M. Pepper, 1980. On the electronicg-factor in n-type silicon inverson layers. Phys. Stat. Sol., 99: 237-242.
Direct Link  |  

Fang, F.F. and P.J. Stiles, 1968. Effects of a tilted magnetic field on a two-dimensional electron gas. Phys. Rev., 174: 823-827.
Direct Link  |  

Hermann, C. and G. Lampel, 1971. Measurement of the g factor of conduction electrons by optical detection of spin resonance in p-type semiconductors. Phys. Rev. Lett., 27: 373-376.
Direct Link  |  

Huag, A., 1975. Theoretical Solid State Physics. Vol. 1, Pergamon Press, Oxford, pp: 237-247.

Janak, J.F., 1969. g-Factor of the two dimensional interacting interacting electron gas. Phys. Rev., 178: 1416-1418.
Direct Link  |  

Lakhan, A.A. and O.J. Stiles, 1973. Experimentally study of osillatory values of g of a two dimensionial electron gas. Phys. Rev. Lett., 31: 25-28.
Direct Link  |  

Landau, L.D. and E.M. Lifshitz, 1962. Quantum Mechanics. Pergamon Press, New York, pp: 471-483.

Nicholas, R.J., M.A. Brummel and J.C. Portal, 1982. High field magneto-transport mesurements in GaAs-GaAlAa multilayers. Surface Sci., 113: 290-294.

Nicholas, R.J., R.J. Huag and K.V. Klitzing, 1988. Exchange enhancement of the spin splitting in a GaAs-GaxAl1-xAs heterojunction. Phys. Rev., 37: 1294-1302.
Direct Link  |  

Pidgeon, C.R., D.L. Mitchell and R.N. Brown, 1967. Interband manetoabsorbtion in InAs and InSb. Phys. Rev., 154: 737-742.

Shklovskii, B.I. and A.L. Efros, 1984. Electronic Properties of Doped Semiconductors. Springer Verlag, New York, pp: 388.

Stern, F., 1972. Electron exchange energy in Si inversion layers. Phys. Rev. Lett., 30: 278-280.

Suzuki, K. and Y. Kawamoto, 1973. The g-factors of interacting electrons in silicon inversion layers. J. Phys. Jap., 35: 1456-1459.
Direct Link  |  

Von Klitzin, K., G. Dorda and M. Pepper, 1980. New method for hogh-accuracy determination of the fine-structure constant based on quantized hall resistance. Pyhs. Rev. Lett., 45: 494-497.
CrossRef  |  

Weisbunch, C. and C. Hermann, 1977. Optical detection of conduction-electron spin resonance in GaAs, Ga1-xInxAs and Ga1-xAlxAs. Phys. Rev., 15: 816-822.
CrossRef  |  Direct Link  |  

White, A.M., I. Hinchliff, P.J. Dean and P.D. Greene, 1972. Zeeman spectra of the principal bound exciton in Sn-doped gallium arsenide. Solid State Commun., 10: 497-500.
CrossRef  |  Direct Link  |  

Wilson, D.K. and G. Fether, 1961. Electron spin resonance experiments on donors in silicon. III: Investigation of excited states by the application of uniaxial stress and their importance in relaxation processes. Phys. Rev., 124: 1068-1083.
CrossRef  |  Direct Link  |  

©  2019 Science Alert. All Rights Reserved