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Articles by T. Detchprohm
Total Records ( 2 ) for T. Detchprohm
  T. Detchprohm , M. Zhu , Y. Li , Y. Xia , L. Liu , D. Hanser and C. Wetzel

We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of 14% is needed for both, a- and m-plane quantum wells (QWs), while 8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.

  C. Wetzel , Yufeng Li , J. Senawiratne , Mingwei Zhu , Yong Xia , S. Tomasulo , P.D. Persans , Lianghong Liu , D. Hanser and T. Detchprohm

An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530 nm and 0.08 for those emitting at 555 nm are determined. Those values hold for the high current density of 50 A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16 lm/W. At 780 A/cm2 we obtain 22 lm when measured through the substrate only. The 555 nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485 nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488 nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.

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