Asian Science Citation Index is committed to provide an authoritative, trusted and significant information by the coverage of the most important and influential journals to meet the needs of the global scientific community.  
ASCI Database
308-Lasani Town,
Sargodha Road,
Faisalabad, Pakistan
Fax: +92-41-8815544
Contact Via Web
Suggest a Journal
Journal of Crystal Growth
Year: 2009  |  Volume: 311  |  Issue: 10  |  Page No.: 2942 - 2947

Characterization of GaInN/GaN layers for green emitting laser diodes

C. Wetzel, Yufeng Li, J. Senawiratne, Mingwei Zhu, Yong Xia, S. Tomasulo, P.D. Persans, Lianghong Liu, D. Hanser and T. Detchprohm    

Abstract:

An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. First, in conventional heteroepitaxy on sapphire substrate along the polar c-axis of GaN, green and deep green emitting light-emitting diode (LED) wafers are being developed. By means of photoluminescence at variable low temperature and excitation density, internal quantum efficiencies of 0.18 for LEDs emitting at 530 nm and 0.08 for those emitting at 555 nm are determined. Those values hold for the high current density of 50 A/cm2 of high-power LED lamps. In bare epi dies, we obtain efficacies of 16 lm/W. At 780 A/cm2 we obtain 22 lm when measured through the substrate only. The 555 nm LED epi material under pulsed photoexcitation shows stimulated emission up to a wavelength of 485 nm. This strong blue shift of the emission wavelength can be avoided in homoepitaxial multiple quantum well (MQW) and LED structures grown along the non-polar a- and m-axes of low-dislocation-density bulk GaN. Here, wavelength-stable emission is obtained at 500 and 488 nm, respectively, independent on excitation power density opening perspectives for visible laser diodes.

View Fulltext    |   Related Articles   |   Back
   
 
 
 
  Related Articles

No Article Found
 
 
 
Copyright   |   Desclaimer   |    Privacy Policy   |   Browsers   |   Accessibility