Articles by M. Yamaguchi (4)

Flow modulation effect on N incorporation into GaAs(1-x)Nx films during chemical beam epitaxy growth

H. Suzuki, K. Nishimura, K. Saito, Y. Ohshita, N. Kojima and M. Yamaguchi

Journal of Crystal Growth 311 ( 10 ): 2821 - 2824 , 2009

HVPE growth of semi-polar (1 1 2¯ 2)GaN on GaN template (1 1 3)Si substrate

N. Suzuki, T. Uchida, T. Tanikawa, T. Hikosaka, Y. Honda, M. Yamaguchi and N. Sawaki

Journal of Crystal Growth 311 ( 10 ): 2875 - 2878 , 2009

Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si

T. Tanikawa, Y. Kagohashi, Y. Honda, M. Yamaguchi and N. Sawaki

Journal of Crystal Growth 311 ( 10 ): 2879 - 2882 , 2009

MOVPE growth and properties of GaN on (1 1 1)Si using an AlInN intermediate layer

M. Irie, N. Koide, Y. Honda, M. Yamaguchi and N. Sawaki

Journal of Crystal Growth 311 ( 10 ): 2891 - 2894 , 2009

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