Journal of Applied Sciences1812-56541812-5662Asian Network for Scientific Information10.3923/jas.2006.1959.1965BenaissaI. HiadsiSaid BelaidiAbdelkader 9200669The goal of the simulation of electronic transport is to obtain, starting from the geometrical and physical description of a device, behaviours in static or dynamic mode of the charge carriers (electrons and holes), according to the boundary conditions (polarizations applied, currents injected, emission of light). One of the results usually used is for example the characteristic current-voltage of the component, which makes it possible to extract a great number of information on its performances. The physical model generally retained for the simulation of electronic transport corresponds to a strongly nonlinear system of equations and posing very many problems in terms of stability and quality of convergence. Moreover, the simulation of the devices, with heterojunctions, introduced new problems, unknown in micro-electronics of the devices, such as the appearance of discontinuities of material in the structure, which make the case still much more delicate to solve. The solutions adopted to be able to free it self from these difficulties now also found besides applications in the simulation of silicon- silicon polycrystalline junctions. The present study, explains in detail the physical and numerical models used in our study of a p-n silicon microjunction.]]>Akcasu, O.E.,1984Benaissa, I.,2001De, S.S.,1994Filoche, M.,1992Kobeissi, H., F.M. Ghannouchi and A. Kheibir,1993Kurata, M.,1982Lin, H., N. Goldsman and I.D. Mayergoyz,1992Liou, J.J.,1992Marshak, A.H.,1987Mathieu, H.,1996Mohammad, S.N.,1992Scharfetter, D.L. and H.K. Gummel,1969Schockley, W.,1952Singh, S.P., N. Goldsman and I.D. Mayergoyz,1996Snowden, C.M.,1988Sze, S.M.,1985Vecchi, M.C. and L.G. Reyna,1994Yoshi, A.,1987Zommiti, M.,1982