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Research Article
 

Reflectivity of Porous Silicon



R. Sabet-Dariani and D. Haneman
 
ABSTRACT

Reflectivity of porous silicon (PS) has been studied on unannealed fresh PS films annealed at250 °C in vacuum. The reflectance spectra of fresh PS films do not change significantly after the annealing. There are two reflection edges, the first at about 1.1 eV(1100 nm) which corresponds to the band gap of crystalline silicon. The second edge occurs at approximately 1.6eV(800 nm) which is due to absorption by the PS film. This gives an estimate of the band gap for our characterized films. It is consistent with the photoluminescence peak at 1.68 eV and suggests that similar origins, band edges, would be involved.

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  How to cite this article:

R. Sabet-Dariani and D. Haneman , 2002. Reflectivity of Porous Silicon. Journal of Applied Sciences, 2: 62-63.

DOI: 10.3923/jas.2002.62.63

URL: https://scialert.net/abstract/?doi=jas.2002.62.63

REFERENCES
Bright, V.M., E.S. Kolesar and D.M. Sowders, 1997. Reflection characteristics of porous silicon surfaces. Optical Eng., 36: 1088-1088.

Canham, L.T., 1990. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Applied Phys. Lett., 57: 1046-1048.
CrossRef  |  Direct Link  |  

Dariani, R.S., D. Haneman, A. Hoffman and D.D. Cohen, 1993. Composition of porous silicon. J. Applied Phys., 73: 2321-2325.

Dariani, R.S., N.S. McAlpine and D. Haneman, 1994. Electroluminescence in porous silicon. J. Applied Phys., 75: 8008-8011.
Direct Link  |  

Ito, T., T. Ohta and A. Hiraki, 1992. Localized nature of photoluminescence from anodically oxidized porous silicon. Jpn. J. Applied Phys., 31: 1-1.

Kolesar, Jr. E.S., V.M. Brightb and D.M. Sowders, 1996. Optical reflectance reduction of textured silicon surfaces coated with an antireflective thin film. Thin. Solid Films, 290-291: 23-29.
CrossRef  |  Direct Link  |  

Koyama, H., M. Araki, Y. Yamamoto and N. Koshida, 1991. Visible photoluminescence of porous si and its related optical properties. Jpn. J. Applied Phys., 30: 3606-3609.
CrossRef  |  Direct Link  |  

Lehmann, V. and U. Gosele, 1996. Porous silicon formation: A quantum wire effect. Applied Phys. Lett., 58: 856-856.
CrossRef  |  Direct Link  |  

Lei, W., M.T. Wilson and N.M. Haegel, 1993. Interpretation of photoluminescence excitation spectroscopy of porous Si layers. Applied Phys. Lett., 62: 1113-1115.
Direct Link  |  

Yuan, C.L., G. Nigel and Y. Oono, 1994. Numerical renormalization group calculations for similarity solutions and travelling waves. Applied Phys. Lett., 35: 1937-1937.

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