Subscribe Now Subscribe Today
Research Article

Quenched-in Lattice Defects in Pure Aluminium

Anwar Manzoor Rana, Abdul Faheem Khan and Abdus Salam
Facebook Twitter Digg Reddit Linkedin StumbleUpon E-mail

Prepared specimens of pure aluminum (99.999%) in the form of thin sheets of 100μm thickness were used for electrical resistivity measurements. Samples were quenched at different temperatures ranging from 373 K to 723 K for 30 minutes. Samples were also annealed for a constant time of 30 minutes at different temperatures (373 K to 673 K). It was observed that resistivity of pure aluminium increases with increase in temperature. The effect of annealing and quenching on electrical resistivity had also been observed. It was found that the room temperature resistivity increases with increase in quenching temperature but decreases after subsequent annealing at various temperatures. Increase in resistivity after quenching was found to be due to creation of defects and imperfections such as vacancies and dislocations etc. Decrease in resistivity after annealing cab be attributed to recovery and recrystallization processes.

Related Articles in ASCI
Similar Articles in this Journal
Search in Google Scholar
View Citation
Report Citation

  How to cite this article:

Anwar Manzoor Rana, Abdul Faheem Khan and Abdus Salam , 2001. Quenched-in Lattice Defects in Pure Aluminium. Journal of Applied Sciences, 1: 244-246.

DOI: 10.3923/jas.2001.244.246


Ansari, M.I., A.M. Rana and Z.A. Sheikh, 1994. The formation of precipitates and G.P. zones in Fe-Cu alloys. Turk. J. Phys., 18: 640-640.

Bauerle, J.E. and J.S. Koehler, 1957. Quench in lattice defects in gold. Phys. Rev., 107: 1493-1498.

Brooks, H., 1995. Article in Impurities and Imperfectins. American Society For Microbiology, Cleveland.

Cahn, R.W. and P. Hassan, 1983. Physical Metallurgy. 3rd Edn., North Holland Physics Publishing, Amsterdom.

Desorbo, W. and D. Turnbull, 1959. Kinetics of vacancy motion in high purity aluminium. Phys. Rev., 115: 560-563.

Federighi, T., 1965. Physical Metallurgy-Principles and Practice. Prentice Hall, New Delhi, India.

Nomias, V., 1976. Study Guide in Physics-Electricity. Allyn and Bacon Inc., Boston.

Rana, A.M., A. Qadeer and T. Abbas, 1999. Crystallization induced phase changes in amorphous Fe84 Nb7 B9 alloy. Proceedings of the 6th International Symposium on Advance Mater, Sept. 19-23, Islamabad, Pakistan, pp: 151-154.

Rosenberg, H.M., 1963. Low Temperature Soil Stste Physics. Claronden Press, Oxford.

Samuels, L.E., 1988. A Technical Guid-Metals Engineering. American Society For Microbiology, UK.

Smallman, R.E., 1976. Modern Physical Metallurg. Butterworths, London.

Theraja, B.L., 1981. A Text Book of Electronic Technology. S. Chand and Co. Ltd., New Delhi, India.

Thomson, M.W., 1969. Defects and Radiation Damage in Metals. Cambridge University Press, Cambridge.

Van Vlack, L.H., 1980. Elements of Materials Science and Engineering. 4th Edn., Addison Wesley Publishing Co. Inc., Philippines.

White, A.H., 1988. Engineering Maerials. 2nd Edn., McGraw-Hill Book Company Inc., New York, USA.

William, J.E., F.E. Trinklein and H.C. Matcalfe, 1976. Modern Physics. Holt Rineheart and Winstron Publishers, New York, USA.

©  2020 Science Alert. All Rights Reserved