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    Publisher: Asian Network for Scientific Information
   
  Asian Journal of Materials Science is an international peer-reviewed scientific journal dedicated for the rapid publication of experimental and theoretical investigations in the structure and properties of all science materials and their broad range of applications. Scope of the journal includes: Metals, ceramics, glasses, polymers, electrical materials, composite materials, fibers, nanostructured materials, nanocomposites, and biological and biomedical materials. Submit your best paper to Asian Journal of Materials Science via online submission system.

  Editor-in-Chief:  Semra Kurama
 
 
Alahyarizadeh, G., H. Zainuriah, S.M. Thahab, M. Amirhoseiny and A.J. Ghazai, 2013. Effects of cavity length on optical characteristics of deep violet InGaN DQW lasers. Adv. Mater. Res., 626: 605-609.
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Alahyarizadeh, G., Z. Hassan, A.J. Ghazai, H. Mahmodi and S.M. Thahab, 2012. Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer. J. Nanophotonics, Vol. 6. .
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Alahyarizadeh, G., Z. Hassan, S.M. Thahab and F.K. Yam, 2014. Improvement of performance characteristics of deep violet InGaN DQW lasers using a strip DQW active region. Optik-Int. J. Light Elect. Optics, 125: 4911-4915.
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Alahyarizadeh, G., Z. Hassan, S.M. Thahab, F.K. Yam and A.J. Ghazai, 2014. Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers. Optik-Int. J. Light Elect. Optics, 125: 341-344.
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Alahyarizadeh, G.H., Z. Hassan, S.M. Thahab, M. Amirhoseiny and N. Naderi, 2012. Comparative study of the performance characteristics of green ingan sqw laser diodes with ternary algan and quaternary alingan electron blocking layer. Digest J. Nanomater. Biostruct., 7: 1869-1880.
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Alkhayatta, A.H.O., M.T. Sabah and A.Z. Inass, 2016. Structure, surface morphology and optical properties of post-annealed delafossite CuFeO2 thin films. Optik, 127: 3745-3749.
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Chuah, L.S., Z. Hassan, H. Abu Hassan, C.W. Chin and S.M. Thahab, 2008. Large area GaN Metal Semiconductor Metal (MSM) photodiode using a thin low temperature GaN cap layer. J. Nonlinear Opt. Phys. Mater., 17: 59-69.
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Chuah, L.S., Z. Hassan, H. Abu Hassan, F.K. Yam, C.W. Chin and S.M. Thahab, 2008. Barrier height enhanced GaN Schottky diodes using a thin AlN surface layer. Int. J. Modern Phys. B, 22: 5167-5173.
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Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2011. A study of the operating parameters and barrier thickness of Al0.08 In0.08 Ga0.84N/AlxInyGa1-x-y N double quantum well laser diodes. Sci. China Technol. Sci., 54: 47-51.
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Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2011. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer. Opt. Express, 19: 9245-9254.
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Ghazai, A.J., S.M. Thahab, H.A. Hassan and Z. Hassan, 2012. The effects of quantum wells number and the built-in polarization on the performance of quaternary AlInGaN UV laser diode. Optik-Int. J. Light Elect. Optics, 123: 856-859.
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Hussein, A.S., Z. Hassan, H.A. Hassan and S.M. Thahab, 2010. Electrical properties of AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) with and without mg-doped carrier confinement layer. Int. J. Nanosci., 9: 263-267.
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Hussein, A.S., Z. Hassan, S.M. Thahab, A. Hassan, M.A. Abid and C.W. Chin, 2011. Structural, optical and electrical properties of undoped and Si-doped AlxGa1-xN thin films on Si (1 1 1) substrate grown by PA-MBE. Phys. B: Condensed Matter, 406: 1267-1271.
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Hussein, A.S., Z. Hassan, S.M. Thahab, S.S. Ng, H.A. Hassan and C.W. Chin, 2011. Effect of Al mole fraction on structural and electrical properties of AlxGa1-xN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy. Applied Surface Sci., 257: 4159-4164.
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Hussein, A.S., Z. Hassan, S.S. Ng, S.M. Thahab, C.W. Chin and H. Abu Hassan, 2010. PA-MBE growth and characterization of high Si-doped AlGaN on Si(111) substrate. Optoelect. Adv. Mater.-Rapid Commun., 4: 59-62.
Hussein, A.SH., S.M. Thahab, Z. Hassan, C.W. Chin, H. Abu Hassan and S.S. Ng, 2009. High Al-content AlxGa1-xN epilayers grown on Si substrate by plasma-assisted molecular beam epitaxy. J. Alloys Compounds, 487: 24-27.
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Jandow, N.N., F.K. Yam, S.M. Thahab, H.A. Hassan and K. Ibrahim, 2010. Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on Poly Propylene Carbonate (PPC) plastic substrate. Curr. Applied Phys., 10: 1452-1455.
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Jandow, N.N., F.K. Yam, S.M. Thahab, K. Ibrahim and H.A. Hassan, 2010. The characteristics of ZnO deposited on PPC plastic substrate. Mater. Lett., 64: 2366-2368.
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Jandow, N.N., K.A. Ibrahim, H.A. Hassan, S.M. Thahab and O.S. Hamad, 2010. The electrical properties of ZnO MSM photodetector with Pt contact electrodes on PPC plastic. J. Elect. Devices, 7: 225-229.
Shekari, L., H.A. Hassan, S.M. Thahab and Z. Hassan, 2011. Growth and characterization of high-quality GaN nanowires on PZnO and PGaN by thermal evaporation. J. Nanomater., Vol. 62. .
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Shekari, L., H.A. Hassan, S.M. Thahab, A.J. Ghazai and Z. Hassan, 2012. Growth and analysis of GaN nanowire on PZnO by different-gas flow. Applied Surf. Sci., 258: 6590-6594.
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Thahab, S.M., 2018. Surface morphology effect on the optical properties of III-nitrides nanostructures for photo-sensing applications. Sensor Lett., 16: 76-79.
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Thahab, S.M., H. Abu Hassan and Z. Hassan, 2007. Influence of thick n-AlGaN contact layer on the performance of InGaN laser with diode modulation-doped strain-layer superlattices. J.Solid State Sci. Technol. Lett., Vol. 14. .
Thahab, S.M., H. Abu Hassan and Z. Hassan, 2007. The performance of ingan laser diodes consists of a separate confinement heterostructure with a multiple quantum well active region. J.Solid State Sci. Technol. Lett., 14: 130-138.
Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. InAlGaN quaternary multi-quantum wells UV laser diode performance and characterization. World Acad. Sci. Eng. Technol., 55: 352-355.
Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. InGaN/GaN laser diode characterization and quantum well number effect. Chinese Opt. Lett., 7: 226-230.
Thahab, S.M., H. Abu Hassan and Z. Hassan, 2009. Performance of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers. World Acad. Sci. Eng. Technol., 55: 11-15.
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Thahab, S.M., H.A. Hassan and Z. Hassan, 2007. Performance and optical characteristic of InGaN MQWs laser diodes. Opt. Express, 15: 2380-2390.
Thahab, S.M., H.O.A. Adel and A.Z. Inass, 2016. Influences of post-annealing temperature on the structural and electrical properties of mixed oxides (CuFeO2 and CuFe2O4) thin films prepared by spray pyrolysis technique. Mater. Sci. Semicond. Process., 41: 436-440.
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Thahab, S.M., H.O.A. Adel and M.S. Salah, 2014. Influence of substrate type on the structural ,optical and electrical properties of CdxZn1-xS MSM thin films prepared by spray pyrolysis method. Mater. Sci. Semicond. Process., 26: 49-54.
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Thahab, S.M., H.O.A. Adel and M.S. Salah, 2014. The optical properties of CdxZn1-xSS thin films on glass substrate prepared by spray pyrolysis method. Optik, 125: 5112-5115.
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