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Transparent and conductive fluorine doped tin oxide thin films (FTO) were deposited on to thoroughly cleaned glass substrates by nebulized spray pyrolysis technique using di-hydrated tin (II) chloride (SnCl2.2H2O) and ammonium fluoride (NH4F) as the source of tin (Sn) and fluorine (F), respectively. The fluorine concentration was varied from 0.005-0.04 M in the steps of 0.05. The substrate temperature was constantly maintained at 350°C for all depositions. The influence of dopant concentration on the optoelectronic properties of FTO thin films was investigated using X-Ray Diffraction (XRD) analysis, Scanning Electron Micrographs (SEM), Energy Dispersive Analysis of X-rays (EDAX) spectra, optical analysis and electrical measurements.
