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Articles by Z. Shi
Total Records ( 2 ) for Z. Shi
  H. Zuo , Z. Shi , X. Hu , M. Wu , Z. Guo and A. Hussain
  Not available
  D. Li , J. Ma , S. Mukherjee , G. Bi , F. Zhao , S.L. Elizondo and Z. Shi
  The continual improvement of IV–VI materials grown by molecular beam epitaxy (MBE) is a key step in the development of IV–VI infrared semiconductor devices on silicon substrates. This study presents a novel surface-treatment method which is carried out during MBE growth of monocrystalline PbSe on Si(1 1 1)-oriented substrates. Details of the experimental procedures are described and supported by reflection high-energy electron diffraction (RHEED) patterns. The effect of the in-situ surface-treatment method is exhibited in the forms of improved electrical and morphological properties of PbSe thin films. Specially, the carrier mobility increases almost three-fold at 77 K and nearly two-fold at 300 K. The density of the growth pits undergoes almost three-fold reduction, whereas the density of the threading dislocations decreases around four-fold.
 
 
 
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