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Articles by S.F. Akande
Total Records ( 2 ) for S.F. Akande
  M.O. Alade , S.F. Akande , G.R. Fajinmi , A.S. Adewumi and M. Alade
  Variation of the Breakdown Voltage of n-GaN Schottky diodes over Temperature range (300-900 K) were predicted using online backpropagation neural analysis, based on the existing Sze and Monemar models. The results obtained show that the Breakdown Voltage of n-GaN Schottky diodes do not decrease rapidly with temperature increase, which is in agreement with the experimental results by Cao and earlier calculations using electronic calculator by Alade and Akande. Very high Breakdown Voltage (VBD>2 kV) is possible. The device can be useful to achieve stable electronic systems (solar panels, amplifiers and mixers) operating at high temperature.
  M.O. Alade , S.F. Akande , G.R. Fajinmi , A.S. Adewumi and M. Alade
  The relationship between current and temperature is formulated analytically for n-GaN Schottky diodes based on the thermionic emission theory and the consideration of the experimental facts on the high thermal stability of the device. The energy-temperature transformation of the electrons in the conduction band of the device by application of the statistical mechanics principles (density of state and Fermi-Dirac distribution) resulted into an integral equation of current as a function of temperature for the device. The integral equation is solved analytically using power series expansion. The solution obtained is current-temperature formulation for GaN-Schottky diodes. This formulation will be a very useful tool in analysis and optimization of the GaN-Schottky diodes for applications at high temperatures. The second series of this study, which will come out very soon will establish the agreement between this formulation and the experimental results available on n-GaN Schottky diodes, using computer simulation technique.
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