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Articles by S. Shaari
Total Records ( 4 ) for S. Shaari
  A. Lennie , H. Abdullah , S. Shaari and K. Sopian
  The main objectives was to investigate and enhance the short circuit current density, Jsc and also to improve the efficiency of silicon solar cell by fabricating a layer of silicon dioxide (SiO2) and silicon nitride (Si3N4) coatings on silicon solar cell. This fabrication carried out on high temperature during annealing process from 800-1050°C and variable thickness of antireflection coating (ARC) layer from 50-90 nm thick. The photovoltaic properties of Si3N4 layer have been compared with SiO2 layer to determine which material is suitable in fabricating single layer ARC. Solar cell simulation could be useful for time saving and cost consumption. Problem statement: The Silvaco software is not widely used in designing the 2D solar cell devices because there are lots of 1D, 2D and 3D-simulation beside Silvaco software such as MicroTec, SCAPS-1D. Approach: The silicon dioxide (SiO2) and silicon nitride (Si3N4) coating have been modeled and fabricated on silicon solar cell by using Silvaco software packaging. Results: For SiO2 results, the FF value is approximately 0.758 and η maximum 9.43%. In annealing process, the temperature becomes higher resulted increasing of pn junction depth. However, not to Voc and Jsc values, both parameters were slowly decreased when temperature increased. Meanwhile, when the thickness of SiO2 layer is increased, the parameters of pn junction depth, Jsc, Voc, FF and η were decreased slowly. As for Si3N4 result, the calculated FF approximately 0.758 and η maximum is 9.57%. During annealing process, the temperature increasing constantly follows the increasing of pn junction depth and Jsc, meanwhile the Voc is decreased slowly. In variable Si3N4 thickness simulation, the output parameters of pn junction depth, Jsc, Voc, FF and η were decreased when the thickness increased 10 nm each simulation. Conclusion: The optimum temperature during annealing process for SiO2 is 950°C, while for Si3N4 is 1050°C. For the thickness analysis, the optimum ARC thickness for SiO2 and Si3N4 layer is 50 nm both.
  H. Abdullah , N.P. Ariyanto , S. Shaari , B. Yuliarto and S. Junaidi
  Problem statement: Nano-scale porous ZnO with high surface area have been studied to enhance physicochemical and electrochemical properties of certain optoelectronic devices applications.

Approach: ZnO porous structure consists of flake-shape particles was synthesized through pyrolitic reaction of hydrozincite as Chemical Bath Deposition (CBD) product. Flake-like particle perpendicularly lied on substrate was obtained after 24 hours deposition. After calcinations, cavities on particle surface were observed as additional pores. Result: Sample crystallinity and morphology before and after calcinations were characterized by XRD, FTIR and SEM. Porosity profile was evaluated to its particle structure using N2 adsorption-desorption. Surface area was calculated using BET and it was 15 m2 gram-1. Conclusion: The particle growth in CBD technique had been observed through its morphology and crystalline structure. Macropores structure was formed by cavities among the nanoflakes lied random on substrate and give surface area of 15.1866 m2 gram-1.

  H. Abdullah , M. N. Norazia , S. Shaari , M. Z. Nuawi and N. S. Mohamed Dan
  Problem statement: The focus of this research was to discover the significant influences of substituting low concentration Sn at Zn-site as an Anti-Reflecting Coating (ARC) for Zn1-xSnxO compound. The effects of tin dopants on the structural and morphology properties of ZnO thin films prepared using the sol-gel method were investigated. Approach: The effects of annealing temperature on the deposited films were also investigated at three different temperatures of 400, 500 and 600°C. The composition of the Zn1-xSnxO sample are x = 0.00, 0.05, 0.10 and 0.15. As a starting material, zinc acetate dehydrate was used; 2-methoxyethanol and mono ethanolamine were used as solvent and stabilizer, respectively. The dopant source was tin chloride. Results: Microstructural and surface morphology of samples were characterized by using Scanning Electron Microscopy (SEM). The crystallinity and defects are studied using X-Ray Diffraction (XRD). Molecular bonding is carried out using Raman spectroscopy and optical study of band gap is investigated using UV-VIS measurement. Conclusion: The value of band gap obtained increased slightly as the concentration of Sn increased. The increment of the band gap is acceptable as a requirement for good anti-reflecting coating element. Therefore these films can be applied on silicon solar cell.
  Yasin M. Karfaa , M. Ismail , F.M. Abbou , S. Shaari and S.P. Majumder
  A semi analytical analysis is carried out to investigate the effect of linear crosstalk due to wavelength converters and other Wavelength Division Multiplexing (WDM) components in the presence of interferometric intensity noise and amplified spontaneous emission on the performance of an optical multi-wavelength transport network employing wavelength converters based on XPM in a Single Mode Fiber (SMF) and Mach-Zehnder Interferometer (MZI), where a new parameter names Relative Output Noise (RON) is identified and accounted for. Theoretical study is done for the Bit Error Rate (BER) performance analysis due to crosstalk and ASE noise. It is found that linear crosstalk induces higher penalty when the number of transmitted channels is increased in the presence of all the above effects. The conditions for conversion at 10 Gbps or more are identified. The initial results for monolithic integrated interferometric wavelength converters are reviewed by transmission of 10 Gb/s converted signals over non-dispersion shifted single mode fiber.
 
 
 
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