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Articles by Qian Sun
Total Records ( 2 ) for Qian Sun
  Qian Sun and Yongkang Luo
  Different antioxidant assays were employed in order to evaluate antioxidant activities of porcine hemoglobin hydrolysate (PHH) prepared with pepsin and compared with natural and synthetic antioxidants. Molecular weight distributions of PHH polypeptide components were determined. PHH exhibited DPPH/superoxide/hydroxyl radicals scavenging (EC50 0.95 ± 0.01 mg/ml, 20.34 ± 2.83 mg/ml, 7.90 ± 0.58 mg/ml, respectively); reducing power (EC50 3.02 ± 0.91 mg/ml); and metal chelating activity (EC50 2.59 ± 0.05 mg/ml) in a dose-dependent manner. Hydroxyl radicals scavenging activity of PHH was equivalent to ascorbic acid. Relatively less active of PHH exhibited strong synergistic antioxidant activity with α-tocopherol (TOH). Tested combinations (2:1 and 1:1 of PHH:TOH) showed significantly higher antioxidant activities (P < 0.05) compared to combinations with low PHH rates (1:2 and 1:4 of PHH:TOH). The main synergistic antioxidant mechanism could be due to the regeneration of TOH by PHH. Radicals scavenging mechanism, more than metal chelation, could play a major role in the antioxidant process of PHH.
  Qian Sun , Yong Suk Cho , Bo Hyun Kong , Hyung Koun Cho , Tsung Shine Ko , Christopher D. Yerino , In-Hwan Lee and Jung Han

In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.

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