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Articles by M.O. Alade
Total Records ( 5 ) for M.O. Alade
  M.O. Alade , S.F. Akande , G.R. Fajinmi , A.S. Adewumi and M. Alade
  Variation of the Breakdown Voltage of n-GaN Schottky diodes over Temperature range (300-900 K) were predicted using online backpropagation neural analysis, based on the existing Sze and Monemar models. The results obtained show that the Breakdown Voltage of n-GaN Schottky diodes do not decrease rapidly with temperature increase, which is in agreement with the experimental results by Cao and earlier calculations using electronic calculator by Alade and Akande. Very high Breakdown Voltage (VBD>2 kV) is possible. The device can be useful to achieve stable electronic systems (solar panels, amplifiers and mixers) operating at high temperature.
  M.O. Alade , E.P. Ogherowo and O.M. Durodola
  In this study, a stand alone 75 watt solar electric generator is designed and constructed to convert the solar radiation of appropriate wavelength from the sun into direct electric current based on photovoltaic principle. The system has proven to meet the necessary requirement under laboratory testing with only few shortcomings. The system can be employed to supply power to laboratory equipment such as signal generator, oscilloscope, network analyzer and spectrum analyzer (all in the power range of 75 watts) useful in field research of electronic communication research. The 75 watt solar electric generator designed and constructed is also useful in remote areas to produce electric power where there is no easy accesibility to utility electric power or other useful sources of electric power.
  M.O. Alade , M.A. Salawu , A.S. Adewumi and P.C. Amalu
  In this study, the design, construction and experimental investigation of the performance of two-element helical antenna array for television and mobile phone networks operating at 400-900 MHz band are reported. The Chang Puak online simulator was employed to carry out the geometrical structural design, using 4 mm diameter copper pipe for the helical elements constructions, flat plate aluminium as the reflector, 110 mm diameter PVC pipe and steel plates as supports for the helical elements. The spacing of the helical elements of the array corresponds to the wavelengths of the upper, middle and lower frequencies of the desired frequency band. The experimental measurements of the frequency responses and radiation patterns of the proposed antenna array were carried out to analyze the performances of the antenna within the frequency band under consideration while varying the spacing between the helical elements. The results obtained show that practical Butterworth (flat) frequency responses were observed for the proposed antenna at the desired frequency band for all spacing under consideration. Also, the results of measured radiation patterns obtained at all resonant frequency within the desired frequency band for all spacing under consideration show that the proposed 2-element helical antenna array is highly bi-directional type. The antenna can be employed as a mobile phone signal booster’s antenna and also as a Very High Frequency/Ultra High Frequency (VHF/UHF) television reception antenna.
  M.O. Alade and A.S. Adewumi
  In this study, design and construction of a folded dipole log-periodic stack array antenna operating at UHF/L band (900-2000 MHz) for GSM base stations applications are presented. Two major parameters, namely the gain and radiation patterns were measured and used to evaluate the performance characteristics of the proposed antenna. The results obtained show that the antenna’s measured gain varies between 8.8 and 13.2 dBi over the impedance bandwidth of 900-2000 MHz. Also, the measured radiation patterns of the antenna show omnidirectional patterns with the beamwidth >90° for all resonant frequencies within the band.
  M.O. Alade , S.F. Akande , G.R. Fajinmi , A.S. Adewumi and M. Alade
  The relationship between current and temperature is formulated analytically for n-GaN Schottky diodes based on the thermionic emission theory and the consideration of the experimental facts on the high thermal stability of the device. The energy-temperature transformation of the electrons in the conduction band of the device by application of the statistical mechanics principles (density of state and Fermi-Dirac distribution) resulted into an integral equation of current as a function of temperature for the device. The integral equation is solved analytically using power series expansion. The solution obtained is current-temperature formulation for GaN-Schottky diodes. This formulation will be a very useful tool in analysis and optimization of the GaN-Schottky diodes for applications at high temperatures. The second series of this study, which will come out very soon will establish the agreement between this formulation and the experimental results available on n-GaN Schottky diodes, using computer simulation technique.
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