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Articles by M. Zhu
Total Records ( 1 ) for M. Zhu
  T. Detchprohm , M. Zhu , Y. Li , Y. Xia , L. Liu , D. Hanser and C. Wetzel
 

We demonstrate homoepitaxial growth of GaInN/GaN-based green (500–560 nm) light emitting diodes (LEDs) on a-plane and m-plane quasi-bulk GaN prepared by hydride vapor phase epitaxy (HVPE). We find that in order to achieve an emission peak wavelength beyond 500 nm, a minimum InN-fraction of 14% is needed for both, a- and m-plane quantum wells (QWs), while 8% are enough for c-plane-oriented QWs. Besides increasing the InN-fraction in these non-polar QWs, widening the QW also proves to effectively shift the emission to longer wavelengths without loosing efficiency with the benefit of maintaining a low InN-fraction.

 
 
 
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