Asian Science Citation Index is committed to provide an authoritative, trusted and significant information by the coverage of the most important and influential journals to meet the needs of the global scientific community.  
ASCI Database
308-Lasani Town,
Sargodha Road,
Faisalabad, Pakistan
Fax: +92-41-8815544
Contact Via Web
Suggest a Journal
Thin Solid Films
Year: 2010  |  Volume: 518  |  Issue: 15  |  Page No.: 4408 - 4411

Oxygen ion drifted bipolar resistive switching behaviors in TiO2-Al electrode interfaces

Young Ho Do, June Sik Kwak, Yoon Cheol Bae, Kyooho Jung, Hyunsik Im and Jin Pyo Hong    

Abstract: The rutile TiO2 thin film involving two different top electrodes (Pt and Al) clearly shows the unipolar and bipolar resistive switching transitions which are dependent on the degree of redox properties at TiO2 layer-electrode interfaces. Detailed current level analysis coupled with Auger electron spectroscopy measurements of the Pt/TiO2/Pt and Al/TiO2/Pt structures in the on/off switching states revealed the implication of oxygen ion migration induced chemical reaction at the Al-TiO2 interfaces. Therefore, it is expected that the bipolar transition nature of resistive switching with an Al electrode is the resulting formation of a thin AlOx layer due to redox reaction at Al-TiO2 layer interfaces.

View Fulltext    |   Related Articles   |   Back
 
 
   
 
 
 
  Related Articles

 
 
 
 
 
 
 
Copyright   |   Desclaimer   |    Privacy Policy   |   Browsers   |   Accessibility