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Sensors and Actuators B: Chemical
Year: 2009  |  Volume: 139  |  Issue: 2  |  Page No.: 361 - 368

Semiconducting metal oxides as electrode material for YSZ-based oxygen sensors

A. Lari, A. Khodadadi and Y. Mortazavi    

Abstract: The purpose of this research was to explore the effects of semiconducting metal oxides such as Ce0.75Zr0.25O2 (Ce–Zr), Ti0.75Zr0.25O2 (Ti–Zr), Zn0.75Zr0.25O2 (Zn–Zr), and Sn0.75Zr0.25O2 (Sn–Zr), on the performance of YSZ-based oxygen sensors. The semiconducting metal oxides used were prepared by a combustion method and then doped with 1.0 wt.% Pt by impregnation method. The sensors were exposed to synthetic exhaust gases with λ values in the range of 0.8–1.2. The sensors fabricated by Ce0.75Zr0.25O2 and Ti0.75Zr0.52O2 were shown to be independent of temperature variations and their low–high transitions took place just at about λ = 1. The sensor based on Zn0.75Zr0.25O2 also exhibited its transition at λ = 1, but its performance was affected by temperature changes. The behavior of the sensor based on Sn0.75Zr0.25O2 was observed to be temperature dependent and also its transition occurred at λ different from 1. By doping with Pt, the dependence of the sensors on temperature was eliminated to a large extent. Furthermore, the low–high transition for the sensors with λ different from 1 shifted to λ very close to 1. In fact, the presence of platinum reduces the boundary layer which in turn improves the ion conductivity of the sensor.

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