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Journal of Electron Microscopy
Year: 2010  |  Volume: 59  |  Issue: 5  |  Page No.: 367 - 378

Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns

K Saitoh, Y Yasuda, M Hamabe and N. Tanaka    


A method to determine lattice parameters and parameters characterizing the bending strain of the lattice, the direction and magnitude of the displacement field of the bending strain, by using higher-order Laue zone (HOLZ) reflection lines observed in convergent-beam electron diffraction patterns is proposed. In this method, all of the parameters are simultaneously determined by a fit of two Hough transforms of experimental and kinematically simulated HOLZ line patterns. This method has been used to obtain two-dimensional maps of lattice parameter a, the direction and relative magnitude of the displacement field in a Si substrate near a SiGe/Si interface.

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