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Journal of Engineering and Applied Sciences
Year: 2020  |  Volume: 15  |  Issue: 14  |  Page No.: 2798 - 2801

Study the Effect of Thickness on the n-Type Silicon/Poly (O-Toluidine) Hetero Junction Solar Cells

Raheem Abed Jeber, Mokhalad Ali Zbalh, Osamah Kareem Mohammed and Mohammed Hadi Shinen    

Abstract: Poly (O-Toluidine) (POT) was used as a basic material in this research where nano-films of POT were deposited on n-type silicon wafers. The thickness of the (POT ) films was controlled by the spin coating process. Different thickness of (POT) (142, 97 and 81 nm) were obtained by using different spin speed (1000, 2000 and 3000 rpm), respectively. The current density-Voltage (J-V) characteristics were achieved in both light (100 mw cmG2) and dark conditions. The parameters of the photovoltaic samples that is open circuit Voltage (Voc), short-circuit current density (Jsc), Fill Factor (FF) and energy conversion efficiency (η) were calculated. We found that the best thickness of (POT ) film is 97 nm to get best energy conversion efficiency, short-circuit current density and maximum power point.

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