Asian Science Citation Index is committed to provide an authoritative, trusted and significant information by the coverage of the most important and influential journals to meet the needs of the global scientific community.  
ASCI Database
308-Lasani Town,
Sargodha Road,
Faisalabad, Pakistan
Fax: +92-41-8815544
Contact Via Web
Suggest a Journal
Journal of Engineering and Applied Sciences
Year: 2009  |  Volume: 4  |  Issue: 2  |  Page No.: 114 - 118

Prediction of the Breakdown Voltage of n-GaN Schottky diodes at High Temperatures using Online Neural Network Analysis

M.O. Alade, S.F. Akande, G.R. Fajinmi, A.S. Adewumi and M. Alade    

Abstract: Variation of the Breakdown Voltage of n-GaN Schottky diodes over Temperature range (300-900 K) were predicted using online backpropagation neural analysis, based on the existing Sze and Monemar models. The results obtained show that the Breakdown Voltage of n-GaN Schottky diodes do not decrease rapidly with temperature increase, which is in agreement with the experimental results by Cao and earlier calculations using electronic calculator by Alade and Akande. Very high Breakdown Voltage (VBD>2 kV) is possible. The device can be useful to achieve stable electronic systems (solar panels, amplifiers and mixers) operating at high temperature.

Fulltext    |   Related Articles   |   Back
   
 
 
 
  Related Articles

 
 
 
 
Copyright   |   Desclaimer   |    Privacy Policy   |   Browsers   |   Accessibility