Asian Science Citation Index is committed to provide an authoritative, trusted and significant information by the coverage of the most important and influential journals to meet the needs of the global scientific community.  
ASCI Database
308-Lasani Town,
Sargodha Road,
Faisalabad, Pakistan
Fax: +92-41-8815544
Contact Via Web
Suggest a Journal
Journal of Crystal Growth
Year: 2009  |  Volume: 311  |  Issue: 13  |  Page No.: 3395 - 3398

A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(1 1 1) heterostructure

D. Li, J. Ma, S. Mukherjee, G. Bi, F. Zhao, S.L. Elizondo and Z. Shi    

Abstract: The continual improvement of IV–VI materials grown by molecular beam epitaxy (MBE) is a key step in the development of IV–VI infrared semiconductor devices on silicon substrates. This study presents a novel surface-treatment method which is carried out during MBE growth of monocrystalline PbSe on Si(1 1 1)-oriented substrates. Details of the experimental procedures are described and supported by reflection high-energy electron diffraction (RHEED) patterns. The effect of the in-situ surface-treatment method is exhibited in the forms of improved electrical and morphological properties of PbSe thin films. Specially, the carrier mobility increases almost three-fold at 77 K and nearly two-fold at 300 K. The density of the growth pits undergoes almost three-fold reduction, whereas the density of the threading dislocations decreases around four-fold.

View Fulltext    |   Related Articles   |   Back
   
 
 
 
  Related Articles

No Article Found
 
 
 
Copyright   |   Desclaimer   |    Privacy Policy   |   Browsers   |   Accessibility