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Journal of Crystal Growth

Year: 2009  |  Volume: 311  |  Issue: 10  |  Page No.: 3080 - 3084

High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers

J.Q. Liu, J.F. Wang, Y.F. Liu, K. Huang, X.J. Hu, Y.M. Zhang, Y. Xu, K. Xu and H. Yang

Abstract

The threading dislocation density of hydride vapor phase epitaxy (HVPE)-grown thick GaN layers was measured by high-resolution X-ray diffraction (HR-XRD). Three models were compared, namely mosaic model, Kaganer model and modified Kaganer model. X-ray rocking curves (XRC) of (0 0 0 2), (1 0 1¯ 5), (1 0 1¯ 4), (1 0 1¯ 3), (1 0 1¯ 2), (1 0 1¯ 1) and (1 0 1¯ 0) planes were recorded for quantitative analysis. The screw-, edge-, and mixed-type threading dislocation densities were simulated from the XRD line profile by using the three models. The dislocation density was also measured by atomic force microscopy (AFM), wet chemical etching and cathodoluminescence (CL). The results showed that the Kaganer model was more physically precise and well explained the rocking curve broadening for HVPE-grown high-quality GaN compared with the mosaic model. Assuming a randomly distributed threading dislocation configuration, we modified the Kaganer model. Based on the modified Kaganer model, the edge and screw threading dislocation densities in HVPE-grown GaN thick films ranging from 20 μm up to 700 μm were analyzed. It was shown that screw-type dislocation density decreased more rapidly than edge-type dislocation with increase in film thickness.

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