Subscribe Now Subscribe Today
Science Alert
Curve Top
Journal of Applied Sciences
  Year: 2009 | Volume: 9 | Issue: 7 | Page No.: 1285-1292
DOI: 10.3923/jas.2009.1285.1292
Facebook Twitter Digg Reddit Linkedin StumbleUpon E-mail

Comprehensive Analysis of a High-Q, Low Motional Resistance, Very High Frequency MEMS Resonator

F. Babazadeh and S.H. Keshmiri

In this study, design and simulation of an IC-compatible microelectromechanical resonator for use in VHF range of a wireless communication system as a base element in integrated micromechanical resonator based oscillators and front-end filters is reported. This resonator can be implemented using thick polysilicon technology. The resonator with new design and structure reduces vibrating micromechanical series motional resistance Rx by increasing electrode-to-resonator overlap area through use of scale up of the motionless dimension of the device; while maintaining the resonant frequency. Quarter-wavelength supporting and attaching to nodal points of the resonator is required to maximize quality factor of the device. Resonant frequencies around 71 MHz, quality factor of 9912 and motional resistances Rx on the order of 480 Ω were obtained by this design.
PDF Fulltext XML References Citation Report Citation
  •    MEMS-based Reconfigurable CMOS LNAs for Wireless Applications
  •    Efficiency of Modified Adomian Decomposition for Simulating the Instability of Nano-electromechanical Switches: Comparison with the Conventional Decomposition Method
How to cite this article:

F. Babazadeh and S.H. Keshmiri, 2009. Comprehensive Analysis of a High-Q, Low Motional Resistance, Very High Frequency MEMS Resonator. Journal of Applied Sciences, 9: 1285-1292.

DOI: 10.3923/jas.2009.1285.1292






Curve Bottom