Abstract: Recently much research has been reported that a transparent oxide semiconductor having optical band gap wider than 3 eV can be applied in microelectronics applications. The TiO2 is the one which meets this requirement. So TiO2 thin films have been deposited on well clean P-type silicon substrates via a sol-gel spin coating method. The phase structure and morphologies of thin Nano crystalline film were characterized by X-Ray powder diffraction (XRD), Field-emission Scanning Electron Microscope (FESEM) and Atomic Force electron Microscope (AFM). The structural characteristics carried out for as deposited thin films shows amorphous nature. The crystallite sizes of the TiO2 particle measured from the typical diffraction peaks and found to be approximately 38 to 65 nm. The annealed films were found to be Nanocrystalline in nature and also greatly improved at higher temperature in N2 atmosphere. The Raman spectra peaks were observed at 144, 192, 390 cm, 519 and 634 cm-1 for active anatase phase of TiO2. The electrical properties were investigated by capacitance-voltage (C-V) and current-voltage (I-V) analysis. The dielectric constant 27 and optical dielectric constant 5.43 were found by C-V analysis and ellipsometry respectively. This paper investigates the sol-gel process to deposit Nanocrystalline TiO2 thin films with simple and cost effective experimental set up.