Abstract: In the field of nanotechnologies nanoparticles are synthesized has made great strides and also in optoelectronics. Zinc Selenide (ZnSe) is a II-VI semiconductor with wide band gap and these semi conducting devices has wide range of applications in various optoelectronic devices and in solar cells. The high purity salt is taken for the deposition. The parameters like concentration [0.1 N], brushing time (50 min) and current (1 mA) are optimized to get polycrystalline films on the Fluorine doped Tin Oxide (FTO) Substrate. The X-Ray Diffraction (XRD) spectra are taken using PANalytical X’PERT-PRO powder X-ray diffractometer and the peaks are identified with the help of JCPDS values. For the as deposited ZnSe, many peaks are observed and in that one peak has (200) and (420) planes respectively for the presence of ZnSe and a broad peak is observed in 14.10°. X-ray diffraction measurement confirms the incorporation of ZnSe with a cubic structure and nanometer size. Photoluminescence spectrum of films is taken by Cary Eclipse EL08083851. The band in 484 nm (2.56 eV) is corresponds to the transition between the valence band to conduction band. The optical band gap value is comparable with Photoluminescence spectra.