Abstract: Prepared specimens of pure aluminum (99.999%) in the form of thin sheets of 100μm thickness were used for electrical resistivity measurements. Samples were quenched at different temperatures ranging from 373 K to 723 K for 30 minutes. Samples were also annealed for a constant time of 30 minutes at different temperatures (373 K to 673 K). It was observed that resistivity of pure aluminium increases with increase in temperature. The effect of annealing and quenching on electrical resistivity had also been observed. It was found that the room temperature resistivity increases with increase in quenching temperature but decreases after subsequent annealing at various temperatures. Increase in resistivity after quenching was found to be due to creation of defects and imperfections such as vacancies and dislocations etc. Decrease in resistivity after annealing cab be attributed to recovery and recrystallization processes.