Abstract: Background and Objective: ZnS:Mn is a very potential semiconductor to be applied to various optoelectronic devices, because it has good optical properties especially transmittance and high band gap in the visible spectrum region. This study aimed to analyze the effect of percentage of deposition rate of Mn dopant on deposition rate of ZnS on each sample making that is useful for the development of science, especially in the field of optics and microelectronics. Materials and Methods: A thin layer of ZnS:Mn with thermal co-evaporation and electron beam method with various deposition rate of Mn dopant to deposition rate of ZnS on each sample has been made. Results: Analysis of transmittance pattern obtained is 67.98-85.82%, the highest transmittance obtained at deposition rate of Mn dopant 0,67%. The Reflectance pattern was obtained by 9.23-15.59%, the highest reflectance at deposition rate of Mn dopant of 0.33%. Band gap energy that was obtained 3.06 eV-3.36%, band gap changes increase along with the changing of deposition rate of Mn dopant. Absorbance was obtained from 0.69-0.77, the lowest absorbance that was obtained at the deposition rate of Mn dopant of 0.50% and refractive index ranged from 2.29-2.53, refractive index tended to increase with increasing deposition rate of Mn dopant. Conclusion: The best transmittance value is ZnS: Mn 0.67% equal to 85.82% with band gap value obtained between 3.06 and 3.36 eV.