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Journal of Applied Sciences
  Year: 2015 | Volume: 15 | Issue: 5 | Page No.: 800-807
DOI: 10.3923/jas.2015.800.807
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Nanoscale DGMOSFET: DC Modelisation and Analysis of Phase Noise in RF Oscillator

Mourad Bella, Saida Latreche and Christian Gontrand

A numerical model for drain and gate currents in symmetrical Double Gate MOSFET (DGMOS) including short-channel and quantum effects is developed. This modelisation in a good agreement was successfully conducted with electrical characteristics of a SILVACO software simulation. So, mixed-mode modeling of a Radio Frequency (RF) LC oscillator, built around the considered DGMOS is developed. The quantum model was applied to the device, whereas, the rest of the circuit is governed by Kirchhoff ‘s laws. The first goal of this work is to establish the DC characteristics, the key is to achieve an analyse of quantum effect on static electrical performances of this device. The second goal is the investigation of phase noise in the considered oscillator. Then, analyse via the LTV (Linear Time Variant) model, the Impulse Sensitivity Function (ISF) of the circuit which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, the phase noise modeling, confronting some analytical developments to mixed-mode simulations was improved.
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How to cite this article:

Mourad Bella, Saida Latreche and Christian Gontrand, 2015. Nanoscale DGMOSFET: DC Modelisation and Analysis of Phase Noise in RF Oscillator. Journal of Applied Sciences, 15: 800-807.

DOI: 10.3923/jas.2015.800.807






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