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Journal of Applied Sciences
  Year: 2010 | Volume: 10 | Issue: 14 | Page No.: 1489-1491
DOI: 10.3923/jas.2010.1489.1491
 
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Growth and Characterization of p-type InSb on n-type (111) and (110) InSb Substrates using Molecular Beam Epitaxy

M. Mohammadkhani, J. Fariborz and A. Mohades Kassai

Abstract:
In this study, Molecular Beam Epitaxy (MBE) has been used to grow p-type InSb layers on both n+(111) and n(110) InSb substrates. Reflection High Energy Electron Diffraction (RHEED) studies along with electro-chemical Capacitance Voltage (CV) profiling system shows reasonable crystal quality on both cases as well as excellent depth impurity profile. Subsequently, using data from C-V profiling, I-V characteristics of these structures were simulated.
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How to cite this article:

M. Mohammadkhani, J. Fariborz and A. Mohades Kassai, 2010. Growth and Characterization of p-type InSb on n-type (111) and (110) InSb Substrates using Molecular Beam Epitaxy. Journal of Applied Sciences, 10: 1489-1491.

DOI: 10.3923/jas.2010.1489.1491

URL: https://scialert.net/abstract/?doi=jas.2010.1489.1491

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