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Journal of Applied Sciences
  Year: 2009 | Volume: 9 | Issue: 9 | Page No.: 1658-1667
DOI: 10.3923/jas.2009.1658.1667
 
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Analysis of Capacitive Microelectromechanical System Accelerometer Proposed with Voltage Reference in Read-Out Circuit

M.A. Miskam, O. Sidek and A.Z. Ruhaifi

Abstract:
This study, present the analysis of the capacitive in-plane linear comb drive microelectromechanical system (MEMS) accelerometer using system-level simulation techniques, finite element method (FEM) and simple analytical modeling. The silicon on insulator high aspect ratio micromachining (SOI-HARM) process is use to fabricate the device. The behavior of the device will be simulated using DC operating point analysis, mechanical resonance frequency analysis, vary analysis, DC transfer analysis and transient analysis. The results agree well with the results obtained by Architect, FEM and analytical analysis. The design methodology and circuit implementation of bandgap reference for MEMS accelerometer also will be described. A low variation in voltage reference is proposed and simulated using Silterra 0.13 μm CMOS technology. The voltage reference is operated with a supply voltage of 2.5 V to achieve an output reference of 1.17949 V. The circuit has achieved a very small variation in reference voltage of about ± 0.36 mV resulting from temperature changes between -50 to 100 °C and maximum PSSR of -49.03 dB.
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How to cite this article:

M.A. Miskam, O. Sidek and A.Z. Ruhaifi, 2009. Analysis of Capacitive Microelectromechanical System Accelerometer Proposed with Voltage Reference in Read-Out Circuit. Journal of Applied Sciences, 9: 1658-1667.

DOI: 10.3923/jas.2009.1658.1667

URL: https://scialert.net/abstract/?doi=jas.2009.1658.1667

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