
	Journal of Applied Sciences
	Year: 2009 \| Volume: 9 \| Issue: 7 \| Page No.: 1285-1292 DOI: 10.3923/jas.2009.1285.1292

Comprehensive Analysis of a High-Q, Low Motional Resistance, Very High Frequency MEMS Resonator

F. Babazadeh and S.H. Keshmiri

Abstract: In this study, design and simulation of an IC-compatible microelectromechanical resonator for use in VHF range of a wireless communication system as a base element in integrated micromechanical resonator based oscillators and front-end filters is reported. This resonator can be implemented using thick polysilicon technology. The resonator with new design and structure reduces vibrating micromechanical series motional resistance R_x by increasing electrode-to-resonator overlap area through use of scale up of the motionless dimension of the device; while maintaining the resonant frequency. Quarter-wavelength supporting and attaching to nodal points of the resonator is required to maximize quality factor of the device. Resonant frequencies around 71 MHz, quality factor of 9912 and motional resistances R_x on the order of 480 Ω were obtained by this design.

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How to cite this article:

F. Babazadeh and S.H. Keshmiri, 2009. Comprehensive Analysis of a High-Q, Low Motional Resistance, Very High Frequency MEMS Resonator. Journal of Applied Sciences, 9: 1285-1292.

DOI: 10.3923/jas.2009.1285.1292

URL: https://scialert.net/abstract/?doi=jas.2009.1285.1292

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