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Journal of Applied Sciences
  Year: 2008 | Volume: 8 | Issue: 4 | Page No.: 636-641
DOI: 10.3923/jas.2008.636.641
Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure
H. Panahi and M. Maleki

Abstract:
The binding energies of donor states (1s, 2s, 2px, 3px) in GaAs-Ga0.7Al0.3As quantum wells are investigated with a variational method under hydrostatic pressure. In the calculation, we take into account the electronic effective mass, dielectric constant and conduction band offset between the well and barriers varying with pressure. Results obtained show that the donor binding energy variation with the well width and the position of impurity under pressure is similar to that without pressure. Also the donor binding energy increases linearly with pressure for all of states in direct gap regime.
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How to cite this article:

H. Panahi and M. Maleki, 2008. Binding Energies of Donor States in GaAs-GaAlAs Quantum Wells Under Hydrostatic Pressure. Journal of Applied Sciences, 8: 636-641.

DOI: 10.3923/jas.2008.636.641

URL: https://scialert.net/abstract/?doi=jas.2008.636.641

 
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