A.M. Hashim
Material Innovations and Nanoelectronics, Faculty of Electrical
Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
K. Yasui
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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A.M. Hashim and K. Yasui, 2008. Low Temperature Heteroepitaxial Growth of 3C-SiC on Silicon Substrates by Triode Plasma Chemical Vapor Deposition using Dimethylsilane. Journal of Applied Sciences, 8: 3523-3527.
DOI: 10.3923/jas.2008.3523.3527
URL: https://scialert.net/abstract/?doi=jas.2008.3523.3527
DOI: 10.3923/jas.2008.3523.3527
URL: https://scialert.net/abstract/?doi=jas.2008.3523.3527