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Journal of Applied Sciences
  Year: 2008 | Volume: 8 | Issue: 1 | Page No.: 189-191
DOI: 10.3923/jas.2008.189.191
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RF MEMS-Based Tunable Filter for X-Band Applications

Md. Fokhrul Islam, M.A. Mohd. Ali and Burhanuddin Yeop Majlis

This study presents the application of RF MEMS based switches in tunable bandpass filter operating in the wireless X-band. The filter is designed on 635 μm-thick high-resistivity silicon substrate which is compatible with the new SiGe process. The design and simulation are performed using 3D full wave electromagnetic simulator IE3D. Tuning is achieved by the Metal-Air-Metal (MAM) based fixed-fixed beam shunt switches, which present variable capacitances along the lines of a parallel coupled bandpass filter, thereby tuning the filter center frequency by 3% between 9.8 to 10.1 GHz. The simulated filter occupies a chip area of 11.8x4.2 mm2 and achieved an insertion loss of only 0.7 dB over the frequency range of 8-11.4 GHz and return loss of less than -10 dB throughout the operation band. This filter is widely used today in radar, satellite and terrestrial communications and electronic countermeasure applications, both militarily and commercially.
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How to cite this article:

Md. Fokhrul Islam, M.A. Mohd. Ali and Burhanuddin Yeop Majlis, 2008. RF MEMS-Based Tunable Filter for X-Band Applications. Journal of Applied Sciences, 8: 189-191.

DOI: 10.3923/jas.2008.189.191






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