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Journal of Applied Sciences
  Year: 2007 | Volume: 7 | Issue: 15 | Page No.: 2040-2045
DOI: 10.3923/jas.2007.2040.2045
 
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Pure Silica Zeolite Beta Membrane: A Potential Low Dielectric Constant Material For Microprocessor Application
Yeong Yin Fong and Subhash Bhatia

Abstract:
The semiconductor industry needs low dielectric constant (low k-value) materials for more advance microprocessor and chips by reducing the size of the device features. In fabricating these contents, a new material with lower k-value than conventional silica (k = 3.9-4.2) is needed in order to improve the circuit performance. The choice of the inorganic zeolite membrane is an attractive option for low k material and suitable for microprocessor applications. A pure silica zeolite beta membrane was synthesized and coated on non-porous stainless steel support using insitu crystallization in the presence of tetraethylammonium hydroxide, TEA (OH), as structure directing agent, fumed silica, HF and deionized water at pH value of 9. The crystallization was carried out for the duration of 14 days under hydrothermal conditions at 130°C. The membrane was characterized by thermogravimetric analysis (TGA), nitrogen adsorption and Scanning Electron Microscope (SEM). SEM results show a highly crystalline; with a truncated square bipyramidal morphology of pure silica zeolite beta membrane strongly adhered on the non-porous stainless steel support. In the present work, the k-value of the membrane was measured as 2.64 which make it suitable for the microprocessor applications.
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How to cite this article:

Yeong Yin Fong and Subhash Bhatia , 2007. Pure Silica Zeolite Beta Membrane: A Potential Low Dielectric Constant Material For Microprocessor Application. Journal of Applied Sciences, 7: 2040-2045.

DOI: 10.3923/jas.2007.2040.2045

URL: https://scialert.net/abstract/?doi=jas.2007.2040.2045

 
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