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Journal of Applied Sciences
  Year: 2007 | Volume: 7 | Issue: 11 | Page No.: 1497-1503
DOI: 10.3923/jas.2007.1497.1503
 
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Distributions of 0.125 - 0.50 MeV/amu 4He Ions Backscattered from Metallic Surface

A.A. Mahasneh, A.W. Ajlouni and O. Abu-Haija

Abstract:
A small post-accelerator has been used to measure the charge-state fractions of 0.125-0.50 MeV/amu He ions backscattered from silver films. The kinematics behavior of the backscattered ions is given by the well-known Rutherford Backscattering Spectrometry (RBS) Technique. In order to determine the film thickness at which the equilibrium film charge-state distribution occurs, we measured the charge state fractions for film thicknesses between 5.4 and 24.8 μg cm-2. Deconvolution analyses of the data reveal that the charge-states of He ions backscattered from Ag-films of thickness 14.8 μg cm-2, within the experimental errors, represent the equilibrium fractions. The experimental data at low energies appear to have three well-resolved peaks corresponding to the charge-state fractions of helium (He0, He+ and He++) while at higher energies only two peaks were detected corresponding to the charge-state fractions of He+ and He++. The mean charge-state and the width of the charge-state distribution width, d, are calculated from the Gaussian model. A formula for calculating the mean charge-state, for our studied energy range, has been proposed. The method of simultaneously measuring all charge states using a single surface barrier detector (SBD) and separation using total curve deconvolution indicates that variations in experimental conditions are minimized.
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How to cite this article:

A.A. Mahasneh, A.W. Ajlouni and O. Abu-Haija, 2007. Distributions of 0.125 - 0.50 MeV/amu 4He Ions Backscattered from Metallic Surface. Journal of Applied Sciences, 7: 1497-1503.

DOI: 10.3923/jas.2007.1497.1503

URL: https://scialert.net/abstract/?doi=jas.2007.1497.1503

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