Research Article

Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs

An analysis of current gain and cutoff frequency for very high maximum oscillation frequency NPN Si/SiGe/Si double heterojunction bipolar transistors (SiGe DHBTs) has been performed. The simulation results for a Box-Germanium and a Box-triangular-Germanium profile in the base of SiGe DHBT are compared while the Ge profile is kept under the critical thickness limit constraint in both the cases. The Box-triangular-Germanium profile SiGe DHBT shows a superior current gain and cut-off frequency owing to an improved base transport limited current gain.

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Khanduri Gagan and Panwar Brishbhan, 2004. Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs. Journal of Applied Sciences, 4: 521-525.

DOI: 10.3923/jas.2004.521.525

URL: https://scialert.net/abstract/?doi=jas.2004.521.525

Journal of Applied Sciences

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Authors

Khanduri Gagan

Panwar Brishbhan

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Research Article

Base Transport Limited Current Gain Analysis for Low-Noise SiGe DHBTs

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