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International Journal of Agricultural Research
  Year: 2008 | Volume: 3 | Issue: 1 | Page No.: 1-26
DOI: 10.3923/ijar.2008.1.26
 
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Effect of Silicon and Boron Foliar Applications on Wheat Plants Grown under Saline Soil Conditions
A.H. Hanafy Ahmed, E.M. Harb, M.A. Higazy and Sh.H. Morgan

Abstract:
Two pot experiments were carried out under different soil salinity levels (0, 2000, 4000 and 6000 ppm), as well as field experiment under saline soil condition, to investigate the effect of spraying silicon (0, 250 and 1000 ppm SiO2) and/or boron (0 and 25 ppm B) sprayed twice (40 and 70 days after sowing) under pots experiment, as well as spraying silicon (0, 250, 500 and 1000 ppm SiO2) and/or boron (0, 25 and 50 ppm B) sprayed three successive times (at 35, 60 and 85 days after sowing) under field experiment on growth, yield and chemical composition of wheat (Triticum aestivum L.) var. Seets 1. Generally, under pots experiment, both silicon levels either alone or combined with boron significantly increased shoots height and leaf area as well as grains yield/plant and weight of 1000. However, under field experiment only the lowest level of silicon significantly increased all the studied growth characters, while all levels of silicon significantly increased number of spikes and grains as well as grains yield when compared with control non-sprayed plants, however, the lowest level of silicon had the superiority effect. Both silicon and boron applications correct to some extent the negative effects of salinity either on growth, yield, nutrients uptake, free polyamines and endogenous plant hormones (gibberellic acid and cytokinins) while decreased abscisic acid. However, no constant trend was obtained for indole-3-acetic acid concentration.
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How to cite this article:

A.H. Hanafy Ahmed, E.M. Harb, M.A. Higazy and Sh.H. Morgan, 2008. Effect of Silicon and Boron Foliar Applications on Wheat Plants Grown under Saline Soil Conditions. International Journal of Agricultural Research, 3: 1-26.

DOI: 10.3923/ijar.2008.1.26

URL: https://scialert.net/abstract/?doi=ijar.2008.1.26

 
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