Opto-Electronic Properties of Fluorine Doped Tin Oxide Films Deposited by Nebulized Spray Pyrolysis Method


	Asian Journal of Applied Sciences
	Year: 2015 \| Volume: 8 \| Issue: 4 \| Page No.: 259-268 DOI: 10.3923/ajaps.2015.259.268

Opto-Electronic Properties of Fluorine Doped Tin Oxide Films Deposited by Nebulized Spray Pyrolysis Method

P. Karthick, Divya Vijayanarayanan, S. Suja, M. Sridharan and K. Jeyadheepan

Abstract: Transparent and conductive fluorine doped tin oxide thin films (FTO) were deposited on to thoroughly cleaned glass substrates by nebulized spray pyrolysis technique using di-hydrated tin (II) chloride (SnCl₂.2H₂O) and ammonium fluoride (NH₄F) as the source of tin (Sn) and fluorine (F), respectively. The fluorine concentration was varied from 0.005-0.04 M in the steps of 0.05. The substrate temperature was constantly maintained at 350°C for all depositions. The influence of dopant concentration on the optoelectronic properties of FTO thin films was investigated using X-Ray Diffraction (XRD) analysis, Scanning Electron Micrographs (SEM), Energy Dispersive Analysis of X-rays (EDAX) spectra, optical analysis and electrical measurements.

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How to cite this article:

P. Karthick, Divya Vijayanarayanan, S. Suja, M. Sridharan and K. Jeyadheepan, 2015. Opto-Electronic Properties of Fluorine Doped Tin Oxide Films Deposited by Nebulized Spray Pyrolysis Method. Asian Journal of Applied Sciences, 8: 259-268.

DOI: 10.3923/ajaps.2015.259.268

URL: https://scialert.net/abstract/?doi=ajaps.2015.259.268

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