M. Tariq Bhatti
Department of Physics Bahauddin Zakariya University, Multan-60800, Pakistan
Anwar Manzoor Rana
Materials Science Department, Bahauddin Zakariya University, Mutlan-60800, Pakistan
Abdul Fahem Khan
Materials Science Department, Bahauddin Zakariya University, Mutlan-60800, Pakistan
M. Iqbal Ansari
Department of Physics, College of Science, King Saud University, Riyadh 11451, Saudi Arabia
ABSTRACT
The RF-sputtering technique was employed to prepare thin films of Indium Tin Oxide (In2O3+SnO2 or ITO) on glass substrates. Five slides of ITO films were annealed at different temperatures ranging from 100-400 °C for a constant time of 15 min. The ITO thin films were observed to possess resistivities in the range 5x10-4-11.5x10-4Ω-cm at different annealing temperatures. The increase in resistivities due to heat treatment was associated with filling up of oxygen vacancies and decrease in resistivity was attributed to rearrangement and removal of defects as well as improvement in the crystallinity. ITO thin films were of comparable quality to those deposited elsewhere for use as window layers in solar cells.
PDF References Citation
How to cite this article
M. Tariq Bhatti, Anwar Manzoor Rana, Abdul Fahem Khan and M. Iqbal Ansari, 2002. Effect of Annealing on Electrical Properties of Indium Tin Oxide (ITO) Thin Films. Journal of Applied Sciences, 2: 570-573.
DOI: 10.3923/jas.2002.570.573
URL: https://scialert.net/abstract/?doi=jas.2002.570.573
DOI: 10.3923/jas.2002.570.573
URL: https://scialert.net/abstract/?doi=jas.2002.570.573
REFERENCES
- Van der Meerakker, J.E.A.M., E.A. Meulenkamp and M. Scholten, 1993. (Photo)electrochemical characterization of tin-doped indium oxide. J. Appl. Phys., 74: 3282-3288.
CrossRefDirect Link - Chopra, K.L., S. Major and D.K. Pandya, 1983. Transparent conductors: A status review. Thin Solid Films, 102: 1-46.
CrossRefDirect Link - Nishio, K., T. Sei and T. Tsuchiya 1996. Preparation and electrical properties of ITO thin films by dip-coating proces. J. Mat. Sci., 31: 1761-1766.
CrossRefDirect Link - Mizuhashi, M., 1980. Electrical properties of vacuum-deposited indium oxide and indium tin oxide films. Thin Solid Films, 70: 91-100.
CrossRefDirect Link - Song, P.K., Y. Shigesato, I. Yasui, C.W. Ow-Yang and D.C. Paine, 1998. Study on crystallinity of tin-doped indium oxide films deposited by DC magnetron sputtering. Jap. J. Appl. Phys. Part I, 37: 1870-1876.
CrossRefDirect Link - Turner, P., R.P. Howson and C.A. Bishop, 1981. Optical thin films obtained by plasma-induced chemical vapor deposition. Thin Solid Films, 83: 253-258.
Direct Link - Tahaar, R.B.H., T. Ban, Y. Ohya and Y. Takahashi, 1998. Tin doped indium oxide thin films: Electrical properties. J. Appl. Phys., 83: 2631-2645.
Direct Link - Feng, T., A.K. Gosh and C. Fishmann, 1979. Efficient electron-beam-deposited ITO/n-Si solar cells. J. Applied Phys., 50: 4972-4977.
CrossRefDirect Link - Vink, T.J., W. Walrave, J.L.C. Daams, P.C. Baarslag and J.E.A. van der Meerakker, 1995. On the homogeneity of sputter-deposited ITO films Part I: Stress and microstructure. Thin Solid Films, 266: 145-151.
CrossRefDirect Link - Oyama, T., N. Hashimoto, J. Shimizu, Y. Akao, H. Kojima, K. Aikawa and K. Suzuki, 1992. Low resistance indium tin oxide films on large scale glass substrate. J. Vac. Sci. Technol., 10: 1682-1686.
Direct Link - Shigesato, Y., S. Takaki and T. Haranoh, 1992. Electrical and structural properties of low resistivity tin-doped indium oxide films. J. Applied Phys., 71: 3356-3356.
CrossRefDirect Link