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Journal of Applied Sciences
  Year: 2010 | Volume: 10 | Issue: 19 | Page No.: 2338-2342
DOI: 10.3923/jas.2010.2338.2342
Fabrication of Pt-Circular Schottky Diode on Undoped AlGaN/GaN HEMT
M. Mohamad, F. Mustafa, A.M. Hashim, S.F. Abd Rahman, A.A. Aziz and Md. R. Hashim

Abstract:
In this study, Pt-circular Schottky diode is successfully fabricated for gas sensor application. The fabricated Schottky diode shows good rectification characteristics. The device which shows improvement in term of wiring connection for electrical characterization is fabricated. The DC I-V curves of fabricated Schottky diodes show low series resistance of 210 Ω and 330 Ω. The Schottky barrier height (SBH) in the range of 0.458-0.708 eV are experimentally obtained and the discrepancy with the calculated SBH is discussed. A measurement setup that has a capability to allow measurement at high temperature, high hydrogen gas density and low vacuum pressure is also presented. The fabricated device is expected to be suitable for gas sensing application.
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How to cite this article:

M. Mohamad, F. Mustafa, A.M. Hashim, S.F. Abd Rahman, A.A. Aziz and Md. R. Hashim, 2010. Fabrication of Pt-Circular Schottky Diode on Undoped AlGaN/GaN HEMT. Journal of Applied Sciences, 10: 2338-2342.

DOI: 10.3923/jas.2010.2338.2342

URL: http://scialert.net/abstract/?doi=jas.2010.2338.2342

 
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