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Journal of Applied Sciences
  Year: 2010 | Volume: 10 | Issue: 18 | Page No.: 2136-2146
DOI: 10.3923/jas.2010.2136.2146
The Future of Non-planar Nanoelectronics MOSFET Devices: A Review
Munawar A. Riyadi, Jatmiko E. Suseno and Razali Ismail

Abstract:
This study was focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry. The recent scaling of IC technology was limiting the employment of conventional, planar structure, thus implies in the wake of the research in non-classical architecture. The present status of extended planar silicon devices, including the insertion of high-k dielectric, metal gate and SOI MOSFET in the recent manufacturing process is elaborated. The alternative path in the enhancement of IC device performance, merely in the sub-50nm dimension is shown, with the role of double gate MOSFET and non-planar structure devices, including vertical FETs, is expected to take greater share, as well as several emerging nanostructures. The possibility to implement the non-planar devices generation heavily depends on the maturity of each technology and the ability to clear the obstacles in processing.
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How to cite this article:

Munawar A. Riyadi, Jatmiko E. Suseno and Razali Ismail, 2010. The Future of Non-planar Nanoelectronics MOSFET Devices: A Review. Journal of Applied Sciences, 10: 2136-2146.

DOI: 10.3923/jas.2010.2136.2146

URL: http://scialert.net/abstract/?doi=jas.2010.2136.2146

 
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