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Journal of Applied Sciences
  Year: 2010 | Volume: 10 | Issue: 18 | Page No.: 2136-2146
DOI: 10.3923/jas.2010.2136.2146
The Future of Non-planar Nanoelectronics MOSFET Devices: A Review
Munawar A. Riyadi, Jatmiko E. Suseno and Razali Ismail

This study was focused on the evaluation of present development of nanoelectronic devices and the projection of future devices, ultimately for non-planar geometry. The recent scaling of IC technology was limiting the employment of conventional, planar structure, thus implies in the wake of the research in non-classical architecture. The present status of extended planar silicon devices, including the insertion of high-k dielectric, metal gate and SOI MOSFET in the recent manufacturing process is elaborated. The alternative path in the enhancement of IC device performance, merely in the sub-50nm dimension is shown, with the role of double gate MOSFET and non-planar structure devices, including vertical FETs, is expected to take greater share, as well as several emerging nanostructures. The possibility to implement the non-planar devices generation heavily depends on the maturity of each technology and the ability to clear the obstacles in processing.
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How to cite this article:

Munawar A. Riyadi, Jatmiko E. Suseno and Razali Ismail, 2010. The Future of Non-planar Nanoelectronics MOSFET Devices: A Review. Journal of Applied Sciences, 10: 2136-2146.

DOI: 10.3923/jas.2010.2136.2146






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