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Journal of Applied Sciences
  Year: 2010 | Volume: 10 | Issue: 16 | Page No.: 1797-1801
DOI: 10.3923/jas.2010.1797.1801
The Sensing Performance of Hydrogen Gas Sensor Utilizing Undoped-AlGaN/GaN HEMT
Mazuina Mohamad, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, Mastura Shafinaz Zainal Abidin, Nihad K. Ali Al-Obaidi, Abdul Manaf Hashim, Azlan Abdul Aziz and Md. Roslan Hashim

Abstract:
High temperature operation and long term stability are important requirements for gas sensor. The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25 to 200°C has been investigated. A 5 nm-thick of catalytic Pt Schottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 and 17.6 nA sec-1, respectively at constant forward bias of 1 V and temperature of 200°C.
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How to cite this article:

Mazuina Mohamad, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, Mastura Shafinaz Zainal Abidin, Nihad K. Ali Al-Obaidi, Abdul Manaf Hashim, Azlan Abdul Aziz and Md. Roslan Hashim, 2010. The Sensing Performance of Hydrogen Gas Sensor Utilizing Undoped-AlGaN/GaN HEMT. Journal of Applied Sciences, 10: 1797-1801.

DOI: 10.3923/jas.2010.1797.1801

URL: http://scialert.net/abstract/?doi=jas.2010.1797.1801

 
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