M. Mohammadkhani
Semiconductor Laboratory, Electronic Research Centre,Iran University of Science and Technology, Tehran, Iran
J. Fariborz
Semiconductor Laboratory, Electronic Research Centre,Iran University of Science and Technology, Tehran, Iran
A. Mohades Kassai
Semiconductor Laboratory, Electronic Research Centre,Iran University of Science and Technology, Tehran, Iran
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M. Mohammadkhani, J. Fariborz and A. Mohades Kassai, 2010. Growth and Characterization of p-type InSb on n-type (111) and (110) InSb Substrates using Molecular Beam Epitaxy. Journal of Applied Sciences, 10: 1489-1491.
DOI: 10.3923/jas.2010.1489.1491
URL: https://scialert.net/abstract/?doi=jas.2010.1489.1491
DOI: 10.3923/jas.2010.1489.1491
URL: https://scialert.net/abstract/?doi=jas.2010.1489.1491