M. Fakhfakh
Laboratoire dElectronique et des Technologies de Information, National Engineering School of Sfax, Tunisia
M. Loulou
Laboratoire dElectronique et des Technologies de Information, National Engineering School of Sfax, Tunisia
N. Masmoudi
Laboratoire dElectronique et des Technologies de Information, National Engineering School of Sfax, Tunisia
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M. Fakhfakh, M. Loulou and N. Masmoudi, 2006. A Fully Optimized Switched Current Class AB Grounded Gate Memory Cell. Information Technology Journal, 5: 698-702.
DOI: 10.3923/itj.2006.698.702
URL: https://scialert.net/abstract/?doi=itj.2006.698.702
DOI: 10.3923/itj.2006.698.702
URL: https://scialert.net/abstract/?doi=itj.2006.698.702